IXA17IF1200HJ copack xpt igbt 2(c) 3(e) (g) 1 part number IXA17IF1200HJ backside: isolated c25 ce(sat) vv 1.8 ces 28 1200 = v= v i= a features / advantages: applications: package: easy paralleling due to the positive temperature coefficient of the on-state voltage rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - low emi - square rbsoa @ 3x ic thin wafer technology combined with the xpt design results in a competitive low vce(sat) sonic? diode - fast and soft reverse recovery - low operating forward voltage ac motor drives solar inverter medical equipment uninterruptible power supply air-conditioning systems welding equipment switched-mode and resonant-mode power supplies inductive heating, cookers pumps, fans isoplus247 industry standard outline rohs compliant epoxy meets ul 94v-0 soldering pins for pcb mounting backside: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3600 ixys reserves the right to change limits, conditions and dimensions. 20100623a data according to iec 60747and per semiconductor unless otherwise specified ? 2010 ixys all rights reserved
IXA17IF1200HJ -di /dt = a/s t = c v ces v 1200 collector emitter voltage collector emitter saturation voltage t = 25c collector current a 28 a c vj symbol definition ratings typ. max. min. conditions unit 18 v v ce(sat) total power dissipation 100 w collector emitter leakage current 6.5 v turn-on delay time 70 ns t reverse bias safe operating area a v ges v 20 v gem max. transient gate emitter voltage t = c c v p tot gate emitter threshold voltage rbsoa 45 30 t = c t = c vj v max. dc gate voltage i c25 i c t = 25c vj i = a; v = 15 v cge t = 25c vj v ge(th) i ces i = ma; v = v cgece v = v ; v = 0 v ce ces ge i ges t = 25c vj gate emitter leakage current v = 20 v ge 2.1 2.1 5.9 5.4 ma 0.1 ma 0.1 500 g(on) total gate charge v = v; v = 15 v; i = a ce q ge c 47 nc t t t e e d(on) r d(off) f on off 40 ns 250 ns 100 ns 1.55 mj 1.7 mj current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load v = v; i = a v = 15 v; r = ? ce c ge g v = 15 v; r = ? ge g v = v cemax 1200 short circuit safe operating area s scsoa 10 t = c vj v = v; v = 15 v ce ge short circuit duration t short circuit current i sc sc r = ? ; non-repetitive g 60 a r thjc thermal resistance junction to case 1.26 k/w v rrm v 1200 max. repetitive reverse voltage t = 25c vj t = 25c forward current a 32 a c 19 t = c c i f25 i f t = 25c forward voltage v 2.20 v vj 1.95 t = 125c vj v f i = a f t = 25c reverse current ma * ma vj * t = 125c vj i r r rrm t = 125c vj q i t rr rm rr 3 c 20 a 350 ns reverse recovery charge max. reverse recovery current reverse recovery time v = i = a; v = 0 v f fge e rec 0.7 mj reverse recovery energy r r thjc thermal resistance junction to case 1.5 k/w v = v t = 25c c t = 25c vj t = c vj vj 15 0.6 15 15 20 20 56 56 56 600 900 -400 600 i cm 1.8 r thch thermal resistance case to heatsink k/w r thch thermal resistance case to heatsink k/w * not applicable, see ices value above igbt diode 600 v v = v cemax 900 80 80 80 80 125 125 125 125 125 na 0.25 0.25 ixys reserves the right to change limits, conditions and dimensions. 20100623a data according to iec 60747and per semiconductor unless otherwise specified ? 2010 ixys all rights reserved
IXA17IF1200HJ ratings product mar k in g date code part no. logo ixys abcd assembly code zyyww assembly line isoplus? xxxxxxxxx i x a 17 if 1200 hj part number igbt xpt igbt gen 1 / std copack isoplus247 (3) = = = current rating [a] reverse voltage [v] = = = = package t op c t vj c 150 virtual junction temperature -40 weight g 6 symbol definition typ. max. min. conditions operation temperature unit f c n 120 mounting force with clip 20 v v t = 1 second v t = 1 minute isolation voltage mm mm 2.7 4.1 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 70 a per terminal 125 -40 terminal to terminal isoplus247 delivery mode quantity code no. part number marking on product ordering 50/60 hz, rms; i 1 ma isol IXA17IF1200HJ 507522 tube 30 IXA17IF1200HJ standard 3000 3600 isol t stg c 150 storage temperature -40 threshold voltage v m ? v 0 max r 0 max slope resistance * 1.1 86 1.25 42.5 equivalent circuits for simulation t = vj i v 0 r 0 igbt diode 150 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20100623a data according to iec 60747and per semiconductor unless otherwise specified ? 2010 ixys all rights reserved
IXA17IF1200HJ die konvexe form des substrates ist typ. < 0.04 mm ber der kunststoffoberfl?che der bauteilunterseite the convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side die geh?useabmessungen entsprechen dem typ to-247 ad gem?? jedec au?er schraubloch und l max . this drawing will meet all dimensions requiarement of jedec outline to-247 ad except screw hole and except l max . min max min max a 4.83 5.21 0.190 0.205 a1 2.29 2.54 0.090 0.100 a2 1.91 2.16 0.075 0.085 b 1.14 1.40 0.045 0.055 b2 1.91 2.20 0.075 0.087 b4 2.92 3.24 0.115 0.128 c 0.61 0.83 0.024 0.033 d 20.80 21.34 0.819 0.840 d1 15.75 16.26 0.620 0.640 d2 1.65 2.15 0.065 0.085 d3 20.30 20.70 0.799 0.815 e 15.75 16.13 0.620 0.635 e1 13.21 13.72 0.520 0.540 e 5.45 bsc 0.215 bsc l 19.81 20.60 0.780 0.811 l1 3.81 4.38 0.150 0.172 q 5.59 6.20 0.220 0.244 r 4.25 5.50 0.167 0.217 w - 0.10 - 0.004 dim. millimeter inches e 123 r d l l1 q 3x b 2x b2 b4 w a a2 c a1 2x e e1 d1 d2 d3 2(c) 3(e) (g) 1 outlines isoplus247 ixys reserves the right to change limits, conditions and dimensions. 20100623a data according to iec 60747and per semiconductor unless otherwise specified ? 2010 ixys all rights reserved
IXA17IF1200HJ 0123 0 5 10 15 20 25 3 0 0 5 10 15 20 25 30 35 0 1 2 3 4 012345 0 5 10 15 20 25 3 0 v ce [v] i c [a] q g [nc] v ge [v] 9 v 11 v 5678910111213 0 5 10 15 20 25 30 0 102030405060 0 5 10 15 20 13 v 40 60 80 100 120 140 160 1.2 1.6 2.0 2.4 2.8 e [mj] e on fig. 1 typ. output characteristics v ce [v] i c [a] v ge =15 v 17 v 19 v fig. 2 typ. output characteristics i c [a] fig. 3 typ. tranfer characteristics v ge [v] fig. 4 typ. turn-on gate charge fig. 5 typ. switching energy vs. collector current e off fig. 6 typ. switching energy vs. gate resistance r g [] e [mj] i c [a] r g =56 v ce = 600 v v ge = 15 v t vj =125c e on e off i c =15a v ce = 600 v v ge = 15 v t vj =125c i c =15a v ce =600v t vj =125c t vj =25c v ge =15 v t vj =125c t vj = 125c t vj =25c igbt ixys reserves the right to change limits, conditions and dimensions. 20100623a data according to iec 60747and per semiconductor unless otherwise specified ? 2010 ixys all rights reserved
IXA17IF1200HJ 200 300 400 500 600 700 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 q rr [c] i f [a] v f [v] di f /dt [a/s] t vj =125c t vj = 25c t vj = 125c v r = 600 v 10 a 20 a 40 a fig. 7 typ. forward current versus v f fig. 8 typ. reverse recov.charge q rr vs. di/dt 200 300 400 500 600 700 0 5 10 15 20 25 30 35 i rr [a] di f /dt [a/s] t vj =125c v r =600v 10 a 20 a 40 a fig. 9 typ. peak reverse current i rm vs. di/dt 200 300 400 500 600 700 0 100 200 300 400 500 600 700 t rr [ns] di f /dt [a/s] 10 a 20 a 40 a t vj = 125c v r =600 v fig. 10 typ. recovery time t rr versus di/dt fig. 11 typ. recovery energy e rec versus di/dt 200 300 400 500 600 700 0.2 0.4 0.6 0.8 1.0 1.2 1.4 e rec [mj] di f /dt [a/s] t vj =125c v r =600 v 10 a 20 a 40 a 0.001 0.01 0.1 1 10 0.01 0.1 1 10 t p [s] z thjc [k/w] fig. 12 typ. transient thermal impedance diode igbt diode ixys reserves the right to change limits, conditions and dimensions. 20100623a data according to iec 60747and per semiconductor unless otherwise specified ? 2010 ixys all rights reserved
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